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| BC556B, BC557, A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base Current - Peak Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC ICM IBM PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 Watts mW/C C mW mW/C VCBO -80 -50 -30 -5.0 -100 -200 -200 Vdc mAdc mAdc Symbol VCEO -65 -45 -30 Vdc Value Unit Vdc 2 BASE COLLECTOR 1 1 2 3 EMITTER 3 CASE 29 TO-92 STYLE 17 ORDERING INFORMATION Device BC556B BC556BRL1 BC556BZL1 BC557 BC557ZL1 BC557A BC557AZL1 BC557B Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Shipping 5000 Units/Box 2000/Tape & Reel 2000/Ammo Pack 5000 Units/Box 2000/Ammo Pack 5000 Units/Box 2000/Ammo Pack 5000 Units/Box 2000/Tape & Reel 2000/Ammo Pack 5000 Units/Box 2000/Ammo Pack 5000 Units/Box 2000/Tape & Reel 2000/Tape & Reel 2000/Ammo Pack 5000 Units/Box 2000/Tape & Reel 2000/Ammo Pack 2000/Ammo Pack THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RJA RJC Max 200 83.3 Unit C/W C/W BC557BRL1 BC557BZL1 BC557C BC557CZL1 BC558B BC558BRL BC558BRL1 BC558BZL1 BC558C BC558CRL1 BC558ZL1 BC558CZL1 (c) Semiconductor Components Industries, LLC, 2001 1 June, 2000 - Rev. 1 Publication Order Number: BC556/D BC556B, BC557, A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 - - - - - - -2.0 -2.0 -2.0 - - - -100 -100 -100 -4.0 -4.0 -4.0 nA -5.0 -5.0 -5.0 - - - - - - -80 -50 -30 - - - - - - V -65 -45 -30 - - - - - - V V Collector-Base Breakdown Voltage (IC = -100 Adc) Emitter-Base Breakdown Voltage (IE = -100 mAdc, IC = 0) Collector-Emitter Leakage Current (VCES = -40 V) (VCES = -20 V) (VCES = -20 V, TA = 125C) A http://onsemi.com 2 BC556B, BC557, A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = -10 Adc, VCE = -5.0 V) hFE A Series Device B Series Devices C Series Devices BC557 A Series Device B Series Devices C Series Devices A Series Device B Series Devices C Series Devices VCE(sat) - - - VBE(sat) - - VBE(on) -0.55 - -0.62 -0.7 -0.7 -0.82 -0.7 -1.0 - - V -0.075 -0.3 -0.25 -0.3 -0.6 -0.65 V - - - 120 120 180 420 - - - 90 150 270 - 170 290 500 120 180 300 - - - 800 220 460 800 - - - V - (IC = -2.0 mAdc, VCE = -5.0 V) (IC = -100 mAdc, VCE = -5.0 V) Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -10 mAdc, IB = see Note 1) (IC = -100 mAdc, IB = -5.0 mAdc) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -100 mAdc, IB = -5.0 mAdc) Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) (IC = -10 mAdc, VCE = -5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC557 A Series Device B Series Devices C Series Devices 125 125 240 450 - - - - 900 260 500 900 - - - 2.0 2.0 2.0 10 10 10 - - - - - 280 320 360 3.0 - - - 6.0 pF dB MHz Output Capacitance (VCB = -10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = -0.2 mAdc, VCE = -5.0 V, RS = 2.0 kW, f = 1.0 kHz, f = 200 Hz) Small-Signal Current Gain (IC = -2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) Note 1: IC = -10 mAdc on the constant base current characteristics, which yields the point IC = -11 mAdc, VCE = -1.0 V. http://onsemi.com 3 BC556B, BC557, A, B, C, BC558B, C BC557/BC558 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) -100 -200 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 VBE(on) @ VCE = -10 V TA = 25C VBE(sat) @ IC/IB = 10 0.3 Figure 1. Normalized DC Current Gain -2.0 TA = 25C -1.6 -1.2 -0.8 -0.4 0 IC = -10 mA IC = -50 mA IC = -20 mA IC = -200 mA IC = -100 mA 1.0 VB , TEMPERATURE COEFFICIENT (mV/ C) 1.2 1.6 2.0 2.4 2.8 Figure 2. "Saturation" and "On" Voltages VCE , COLLECTOR-EMITTER VOLTAGE (V) -55C to +125C -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 3. Collector Saturation Region f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 10 7.0 C, CAPACITANCE (pF) 5.0 3.0 2.0 Cob Cib TA = 25C 400 300 200 150 100 80 60 40 30 Figure 4. Base-Emitter Temperature Coefficient VCE = -10 V TA = 25C 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 4 BC556B, BC557, A, B, C, BC558B, C BC556 -1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = -5.0 V TA = 25C 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TJ = 25C -0.8 -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE @ VCE = -5.0 V Figure 7. DC Current Gain -2.0 -1.6 -1.2 -0.8 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 -0.2 Figure 8. "On" Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VB, TEMPERATURE COEFFICIENT (mV/ C) VB for VBE -55C to 125C -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT 40 TJ = 25C Cib 500 200 100 50 20 VCE = -5.0 V C, CAPACITANCE (pF) 20 10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -50 -100 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 5 BC556B, BC557, A, B, C, BC558B, C 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 D = 0.5 0.2 0.05 SINGLE PULSE SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) ZqJC(t) = (t) RqJC RqJC = 83.35C/W MAX ZqJA(t) = r(t) RqJA RqJA = 2005C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) Figure 13. Thermal Response -200 IC, COLLECTOR CURRENT (mA) -100 -50 TA = 25C 1s TJ = 25C 3 ms The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. -10 -5.0 -2.0 -1.0 BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region - Safe Operating Area http://onsemi.com 6 BC556B, BC557, A, B, C, BC558B, C PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER http://onsemi.com 7 BC556B, BC557, A, B, C, BC558B, C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 BC556/D |
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